| PART |
Description |
Maker |
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLC257MH-8 |
C-Band Power GaAs FET
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| HWL23NPB |
L-Band GaAS Power FET
|
Hexawave, Inc
|
| HWL26NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL36YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL30NPA |
L-Band GaAs Power FET
|
Aimtron Technology
|
| HWF1682RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL27NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL34YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| HWL32NPA HWL32NPA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
|
